RD3T100CNTL1 - NCH 200V 10A POWER MOSFET

Fabrikatzailea Taldea zenbakia

RD3T100CNTL1

Barne Taldea zenbakia

ABC-RD3T100CNTL1

fabrikatzailea

Rohm Semiconductor

Azalpen laburra

NCH 200V 10A POWER MOSFET

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1050791 Pieces

Erreferentzia Prezioa

~~USD 0.3115~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute RD3T100CNTL1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak RD3T100CNTL1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : RD3T100CNTL1

fabrikatzailea : Rohm Semiconductor

deskribapena : NCH 200V 10A POWER MOSFET

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 10A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 182 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 5.25V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1400pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 85W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : TO-252

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : RD3T , RD3T10

Dokumentuak RD3T100CNTL1

Fitxak : RD3T100CNTL1.pdf

produktu erlazionatutako RD3T100CNTL1 Rohm Semiconductor

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