CRH01(TE85L,Q,M) - DIODE GEN PURP 200V 1A SFLAT

Fabrikatzailea Taldea zenbakia

CRH01(TE85L,Q,M)

Barne Taldea zenbakia

ABC-CRH01(TE85L,Q,M)

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

DIODE GEN PURP 200V 1A SFLAT

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

4560430 Pieces

Erreferentzia Prezioa

~~USD 0.071775~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute CRH01(TE85L,Q,M) stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak CRH01(TE85L,Q,M)

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : CRH01(TE85L,Q,M)

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : DIODE GEN PURP 200V 1A SFLAT

Series : -

Taldearen egoera : Active

Diodo mota : Standard

Tentsioa - DC alderantzikatua (Vr) (Max) : 200V

Oraingoa - Batez besteko laukizatua (Io) : 1A

Tentsioa - Aurrera (Vf) (Max) @ If : 980mV @ 1A

Abiadura : Fast Recovery =< 500ns, > 200mA (Io)

Alderantzizko berreskurapen denbora (trr) : 35ns

Oraingoa - alderantzizko ihesa @ Vr : 10µA @ 200V

Edukiera @ Vr, F : -

Muntatzeko mota : Surface Mount

Paketea / Kaxa : SOD-123F

Hornitzaileentzako gailu paketea : S-FLAT (1.6x3.5)

Eragiketa tenperatura - Junction : -40°C ~ 150°C

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : CRH01 , CRH01(TE

Dokumentuak CRH01(TE85L,Q,M)

Fitxak : CRH01(TE85L,Q,M).pdf

produktu erlazionatutako CRH01(TE85L,Q,M) Toshiba Semiconductor and Storage

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