SISS02DN-T1-GE3 - MOSFET N-CHAN 25V POWERPAK 1212-

Fabrikatzailea Taldea zenbakia

SISS02DN-T1-GE3

Barne Taldea zenbakia

ABC-SISS02DN-T1-GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET N-CHAN 25V POWERPAK 1212-

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

909692 Pieces

Erreferentzia Prezioa

~~USD 0.359815~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SISS02DN-T1-GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SISS02DN-T1-GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SISS02DN-T1-GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET N-CHAN 25V POWERPAK 1212-

Series : TrenchFET® Gen IV

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 25V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 51A (Ta), 80A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 1.2 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 83nC @ 10V

Vgs (Max) : +16V, -12V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 4450pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 5W (Ta), 65.7W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : PowerPAK® 1212-8S

Paketea / Kaxa : PowerPAK® 1212-8S

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SISS0 , SISS02D

Dokumentuak SISS02DN-T1-GE3

Fitxak : SISS02DN-T1-GE3.pdf

produktu erlazionatutako SISS02DN-T1-GE3 Vishay Siliconix

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