FQB11P06TM - MOSFET P-CH 60V 11.4A D2PAK

Fabrikatzailea Taldea zenbakia

FQB11P06TM

Barne Taldea zenbakia

ABC-FQB11P06TM

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET P-CH 60V 11.4A D2PAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1030519 Pieces

Erreferentzia Prezioa

~~USD 0.31763~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FQB11P06TM stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FQB11P06TM

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FQB11P06TM

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET P-CH 60V 11.4A D2PAK

Series : QFET®

Taldearen egoera : Active

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 11.4A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 175 mOhm @ 5.7A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 17nC @ 10V

Vgs (Max) : ±25V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 550pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 3.13W (Ta), 53W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : D²PAK (TO-263AB)

Paketea / Kaxa : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FQB , FQB11

Dokumentuak FQB11P06TM

Fitxak : FQB11P06TM.pdf

produktu erlazionatutako FQB11P06TM ON Semiconductor

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