DMT10H017LPD-13 - MOSFET BVDSS 61V-100V POWERDI50

Fabrikatzailea Taldea zenbakia

DMT10H017LPD-13

Barne Taldea zenbakia

ABC-DMT10H017LPD-13

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET BVDSS 61V-100V POWERDI50

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

797104 Pieces

Erreferentzia Prezioa

~~USD 0.41064~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMT10H017LPD-13 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMT10H017LPD-13

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMT10H017LPD-13

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET BVDSS 61V-100V POWERDI50

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : 2 N-Channel (Dual)

FET Ezaugarria : Standard

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 54.7A (Tc)

Rds On (Max) @ Id, Vgs : 17.4 mOhm @ 17A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 28.6nC @ 10V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1986pF @ 50V

Potentzia - Max : 2.2W (Ta), 78W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : 8-PowerTDFN

Hornitzaileentzako gailu paketea : PowerDI5060-8

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMT10 , DMT10H0

Dokumentuak DMT10H017LPD-13

Fitxak : DMT10H017LPD-13.pdf

produktu erlazionatutako DMT10H017LPD-13 Diodes Incorporated

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