IPW65R110CFDAFKSA1 - MOSFET N-CH 650V 31.2A TO247

Fabrikatzailea Taldea zenbakia

IPW65R110CFDAFKSA1

Barne Taldea zenbakia

ABC-IPW65R110CFDAFKSA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 650V 31.2A TO247

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

84632 Pieces

Erreferentzia Prezioa

~~USD 4.42~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IPW65R110CFDAFKSA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IPW65R110CFDAFKSA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IPW65R110CFDAFKSA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 650V 31.2A TO247

Series : Automotive, AEC-Q101, CoolMOS™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 650V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 31.2A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 110 mOhm @ 12.7A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 1.3mA

Ateko karga (Qg) (Max) @ Vgs : 118nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 3240pF @ 100V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 277.8W (Tc)

Eragiketa tenperatura : -40°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : PG-TO247-3

Paketea / Kaxa : TO-247-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IPW65R , IPW65R110

Dokumentuak IPW65R110CFDAFKSA1

Fitxak : IPW65R110CFDAFKSA1.pdf

produktu erlazionatutako IPW65R110CFDAFKSA1 Infineon Technologies

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