SISS65DN-T1-GE3 - MOSFET P-CHAN 30V PPAK 1212-8S

Fabrikatzailea Taldea zenbakia

SISS65DN-T1-GE3

Barne Taldea zenbakia

ABC-SISS65DN-T1-GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET P-CHAN 30V PPAK 1212-8S

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1682898 Pieces

Erreferentzia Prezioa

~~USD 0.1945~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SISS65DN-T1-GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SISS65DN-T1-GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SISS65DN-T1-GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET P-CHAN 30V PPAK 1212-8S

Series : TrenchFET® Gen III

Taldearen egoera : Active

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 25.9A (Ta), 94A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.6 mOhm @ 15A, 10V

Vgs (th) (Max) @ Id : 2.3V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 138nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 4930pF @ 15V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 5.1W (Ta), 65.8W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : PowerPAK® 1212-8S

Paketea / Kaxa : PowerPAK® 1212-8S

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SISS6 , SISS65D

Dokumentuak SISS65DN-T1-GE3

Fitxak : SISS65DN-T1-GE3.pdf

produktu erlazionatutako SISS65DN-T1-GE3 Vishay Siliconix

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