DMTH10H010LCTB-13 - MOSFET N-CH 100V 108A TO220AB

Fabrikatzailea Taldea zenbakia

DMTH10H010LCTB-13

Barne Taldea zenbakia

ABC-DMTH10H010LCTB-13

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET N-CH 100V 108A TO220AB

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

675591 Pieces

Erreferentzia Prezioa

~~USD 0.4845~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMTH10H010LCTB-13 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMTH10H010LCTB-13

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMTH10H010LCTB-13

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET N-CH 100V 108A TO220AB

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 108A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 9.5 mOhm @ 13A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 53.7nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2592pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.4W (Ta), 166W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-220AB

Paketea / Kaxa : TO-220-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMTH1 , DMTH10H0

Dokumentuak DMTH10H010LCTB-13

Fitxak : DMTH10H010LCTB-13.pdf

produktu erlazionatutako DMTH10H010LCTB-13 Diodes Incorporated

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