SI5513CDC-T1-E3 - MOSFET N/P-CH 20V 4A 1206-8

Fabrikatzailea Taldea zenbakia

SI5513CDC-T1-E3

Barne Taldea zenbakia

ABC-SI5513CDC-T1-E3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET N/P-CH 20V 4A 1206-8

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

2686509 Pieces

Erreferentzia Prezioa

~~USD 0.12184~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SI5513CDC-T1-E3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SI5513CDC-T1-E3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SI5513CDC-T1-E3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET N/P-CH 20V 4A 1206-8

Series : TrenchFET®

Taldearen egoera : Active

FET Mota : N and P-Channel

FET Ezaugarria : Logic Level Gate

Xukatu iturburuko tentsioa (Vdss) : 20V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 4A, 3.7A

Rds On (Max) @ Id, Vgs : 55 mOhm @ 4.3A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 4.2nC @ 5V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 285pF @ 10V

Potentzia - Max : 3.1W

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : 8-SMD, Flat Lead

Hornitzaileentzako gailu paketea : 1206-8 ChipFET™

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SI551 , SI5513C

Dokumentuak SI5513CDC-T1-E3

Fitxak : SI5513CDC-T1-E3.pdf

produktu erlazionatutako SI5513CDC-T1-E3 Vishay Siliconix

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