FQU20N06LTU - MOSFET N-CH 60V 17.2A IPAK

Fabrikatzailea Taldea zenbakia

FQU20N06LTU

Barne Taldea zenbakia

ABC-FQU20N06LTU

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 60V 17.2A IPAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

623462 Pieces

Erreferentzia Prezioa

~~USD 0.525~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FQU20N06LTU stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FQU20N06LTU

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FQU20N06LTU

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 60V 17.2A IPAK

Series : QFET®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 17.2A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 5V, 10V

Rds On (Max) @ Id, Vgs : 60 mOhm @ 8.6A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 13nC @ 5V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 630pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.5W (Ta), 38W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : I-PAK

Paketea / Kaxa : TO-251-3 Short Leads, IPak, TO-251AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FQU , FQU20

Dokumentuak FQU20N06LTU

Fitxak : FQU20N06LTU.pdf

produktu erlazionatutako FQU20N06LTU ON Semiconductor

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