BSM180C12P2E202 - BSM180C12P2E202 IS A SIC SILICO

Fabrikatzailea Taldea zenbakia

BSM180C12P2E202

Barne Taldea zenbakia

ABC-BSM180C12P2E202

fabrikatzailea

Rohm Semiconductor

Azalpen laburra

BSM180C12P2E202 IS A SIC SILICO

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

59084 Pieces

Erreferentzia Prezioa

~~USD 283.5~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute BSM180C12P2E202 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak BSM180C12P2E202

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : BSM180C12P2E202

fabrikatzailea : Rohm Semiconductor

deskribapena : BSM180C12P2E202 IS A SIC SILICO

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : SiC (Silicon Carbide Junction Transistor)

Xukatu iturburuko tentsioa (Vdss) : 1200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 204A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : -

Vgs (th) (Max) @ Id : 4V @ 35.2mA

Ateko karga (Qg) (Max) @ Vgs : -

Vgs (Max) : +22V, -6V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 20000pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1360W (Tc)

Eragiketa tenperatura : 175°C (TJ)

Muntatzeko mota : Chassis Mount

Hornitzaileentzako gailu paketea : Module

Paketea / Kaxa : Module

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : BSM18 , BSM180C

Dokumentuak BSM180C12P2E202

Fitxak : BSM180C12P2E202.pdf

produktu erlazionatutako BSM180C12P2E202 Rohm Semiconductor

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