PMXB360ENEAZ - MOSFET N-CH 80V 1.1A 3DFN

Fabrikatzailea Taldea zenbakia

PMXB360ENEAZ

Barne Taldea zenbakia

ABC-PMXB360ENEAZ

fabrikatzailea

Nexperia USA Inc.

Azalpen laburra

MOSFET N-CH 80V 1.1A 3DFN

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

5151468 Pieces

Erreferentzia Prezioa

~~USD 0.06354~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute PMXB360ENEAZ stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak PMXB360ENEAZ

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : PMXB360ENEAZ

fabrikatzailea : Nexperia USA Inc.

deskribapena : MOSFET N-CH 80V 1.1A 3DFN

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 80V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 1.1A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 450 mOhm @ 1.1A, 10V

Vgs (th) (Max) @ Id : 2.7V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 4.5nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 130pF @ 40V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 400mW (Ta), 6.25W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : DFN1010D-3

Paketea / Kaxa : 3-XDFN Exposed Pad

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : PMXB , PMXB36

Dokumentuak PMXB360ENEAZ

Fitxak : PMXB360ENEAZ.pdf

produktu erlazionatutako PMXB360ENEAZ Nexperia USA Inc.

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