IRF200B211 - MOSFET N-CH 200V 12A TO-220AB

Fabrikatzailea Taldea zenbakia

IRF200B211

Barne Taldea zenbakia

ABC-IRF200B211

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 200V 12A TO-220AB

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

564347 Pieces

Erreferentzia Prezioa

~~USD 0.58~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IRF200B211 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IRF200B211

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IRF200B211

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 200V 12A TO-220AB

Series : HEXFET®, StrongIRFET™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 12A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 170 mOhm @ 7.2A, 10V

Vgs (th) (Max) @ Id : 4.9V @ 50µA

Ateko karga (Qg) (Max) @ Vgs : 23nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 790pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 80W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-220AB

Paketea / Kaxa : TO-220-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IRF , IRF20

Dokumentuak IRF200B211

Fitxak : IRF200B211.pdf

produktu erlazionatutako IRF200B211 Infineon Technologies

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