NTR1P02T3G - MOSFET P-CH 20V 1A SOT-23

Fabrikatzailea Taldea zenbakia

NTR1P02T3G

Barne Taldea zenbakia

ABC-NTR1P02T3G

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET P-CH 20V 1A SOT-23

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

59344 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute NTR1P02T3G stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak NTR1P02T3G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : NTR1P02T3G

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET P-CH 20V 1A SOT-23

Series : -

Taldearen egoera : Obsolete

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 20V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 1A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 180 mOhm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 2.3V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 2.5nC @ 5V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 165pF @ 5V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 400mW (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : SOT-23-3 (TO-236)

Paketea / Kaxa : TO-236-3, SC-59, SOT-23-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : NTR , NTR1P

Dokumentuak NTR1P02T3G

Fitxak : NTR1P02T3G.pdf

produktu erlazionatutako NTR1P02T3G ON Semiconductor

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