DMT3009LFVWQ-7 - MOSFET BVDSS 25V-30V POWERDI333

Fabrikatzailea Taldea zenbakia

DMT3009LFVWQ-7

Barne Taldea zenbakia

ABC-DMT3009LFVWQ-7

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET BVDSS 25V-30V POWERDI333

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

2104431 Pieces

Erreferentzia Prezioa

~~USD 0.15554~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMT3009LFVWQ-7 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMT3009LFVWQ-7

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMT3009LFVWQ-7

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET BVDSS 25V-30V POWERDI333

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 12A (Ta), 50A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 3.8V, 10V

Rds On (Max) @ Id, Vgs : 11 mOhm @ 14.4A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 12nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 823pF @ 15V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.3W (Ta), 35.7W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount, Wettable Flank

Hornitzaileentzako gailu paketea : PowerDI3333-8

Paketea / Kaxa : 8-PowerVDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMT3 , DMT3009

Dokumentuak DMT3009LFVWQ-7

Fitxak : DMT3009LFVWQ-7.pdf

produktu erlazionatutako DMT3009LFVWQ-7 Diodes Incorporated

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