TK40P04M1(T6RSS-Q) - MOSFET N-CH 40V 40A 3DP 2-7K1A

Fabrikatzailea Taldea zenbakia

TK40P04M1(T6RSS-Q)

Barne Taldea zenbakia

ABC-TK40P04M1(T6RSS-Q)

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

MOSFET N-CH 40V 40A 3DP 2-7K1A

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

39200 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TK40P04M1(T6RSS-Q) stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TK40P04M1(T6RSS-Q)

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TK40P04M1(T6RSS-Q)

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : MOSFET N-CH 40V 40A 3DP 2-7K1A

Series : U-MOSVI-H

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 40V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 40A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 11 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.3V @ 200µA

Ateko karga (Qg) (Max) @ Vgs : 29nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1920pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 47W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : DP

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TK40P0 , TK40P04M1

Dokumentuak TK40P04M1(T6RSS-Q)

Fitxak : TK40P04M1(T6RSS-Q).pdf

produktu erlazionatutako TK40P04M1(T6RSS-Q) Toshiba Semiconductor and Storage

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