NP50P04KDG-E1-AY - MOSFET P-CH 40V 50A TO-263

Fabrikatzailea Taldea zenbakia

NP50P04KDG-E1-AY

Barne Taldea zenbakia

ABC-NP50P04KDG-E1-AY

fabrikatzailea

Renesas Electronics America

Azalpen laburra

MOSFET P-CH 40V 50A TO-263

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

50592 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute NP50P04KDG-E1-AY stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak NP50P04KDG-E1-AY

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : NP50P04KDG-E1-AY

fabrikatzailea : Renesas Electronics America

deskribapena : MOSFET P-CH 40V 50A TO-263

Series : -

Taldearen egoera : Obsolete

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 40V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 50A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 10 mOhm @ 25A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 100nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 5100pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1.8W (Ta), 90W (Tc)

Eragiketa tenperatura : 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : TO-263

Paketea / Kaxa : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : NP50P , NP50P04K

Dokumentuak NP50P04KDG-E1-AY

Fitxak : NP50P04KDG-E1-AY.pdf

produktu erlazionatutako NP50P04KDG-E1-AY Renesas Electronics America

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