DMN10H170SK3Q-13 - MOSFET N-CHAN 61V 100V TO252

Fabrikatzailea Taldea zenbakia

DMN10H170SK3Q-13

Barne Taldea zenbakia

ABC-DMN10H170SK3Q-13

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET N-CHAN 61V 100V TO252

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

2197027 Pieces

Erreferentzia Prezioa

~~USD 0.148985~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMN10H170SK3Q-13 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMN10H170SK3Q-13

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMN10H170SK3Q-13

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET N-CHAN 61V 100V TO252

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 12A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 140 mOhm @ 5A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 9.7nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1167pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 42W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : TO-252

Paketea / Kaxa : TO-252-3, DPak (2 Leads + Tab), SC-63

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMN10 , DMN10H17

Dokumentuak DMN10H170SK3Q-13

Fitxak : DMN10H170SK3Q-13.pdf

produktu erlazionatutako DMN10H170SK3Q-13 Diodes Incorporated

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