CSD19502Q5BT - MOSFET N-CH 80V 100A SON5X6

Fabrikatzailea Taldea zenbakia

CSD19502Q5BT

Barne Taldea zenbakia

ABC-CSD19502Q5BT

fabrikatzailea

T-I

Azalpen laburra

MOSFET N-CH 80V 100A SON5X6

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

379715 Pieces

Erreferentzia Prezioa

~~USD 0.862~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute CSD19502Q5BT stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak CSD19502Q5BT

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : CSD19502Q5BT

fabrikatzailea : T-I

deskribapena : MOSFET N-CH 80V 100A SON5X6

Series : NexFET™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 80V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 100A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 4.1 mOhm @ 19A, 10V

Vgs (th) (Max) @ Id : 3.3V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 62nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 4870pF @ 40V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 3.1W (Ta), 195W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-VSON-CLIP (5x6)

Paketea / Kaxa : 8-PowerTDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : CSD1 , CSD195

Dokumentuak CSD19502Q5BT

Fitxak : CSD19502Q5BT.pdf

produktu erlazionatutako CSD19502Q5BT T-I

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