IPG16N10S4L61AATMA1 - MOSFET 2N-CH 8TDSON

Fabrikatzailea Taldea zenbakia

IPG16N10S4L61AATMA1

Barne Taldea zenbakia

ABC-IPG16N10S4L61AATMA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET 2N-CH 8TDSON

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1600403 Pieces

Erreferentzia Prezioa

~~USD 0.204525~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IPG16N10S4L61AATMA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IPG16N10S4L61AATMA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IPG16N10S4L61AATMA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET 2N-CH 8TDSON

Series : Automotive, AEC-Q101, OptiMOS™

Taldearen egoera : Active

FET Mota : 2 N-Channel (Dual)

FET Ezaugarria : Logic Level Gate

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 16A

Rds On (Max) @ Id, Vgs : 61 mOhm @ 16A, 10V

Vgs (th) (Max) @ Id : 2.1V @ 90µA

Ateko karga (Qg) (Max) @ Vgs : 11nC @ 10V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 845pF @ 25V

Potentzia - Max : 29W

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : 8-PowerVDFN

Hornitzaileentzako gailu paketea : PG-TDSON-8-10

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IPG16N , IPG16N10S

Dokumentuak IPG16N10S4L61AATMA1

Fitxak : IPG16N10S4L61AATMA1.pdf

produktu erlazionatutako IPG16N10S4L61AATMA1 Infineon Technologies

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