IXFT320N10T2 - MOSFET N-CH 100V 320A TO-26

Fabrikatzailea Taldea zenbakia

IXFT320N10T2

Barne Taldea zenbakia

ABC-IXFT320N10T2

fabrikatzailea

IXYS

Azalpen laburra

MOSFET N-CH 100V 320A TO-26

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

69660 Pieces

Erreferentzia Prezioa

~~USD 6.040335~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IXFT320N10T2 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IXFT320N10T2

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IXFT320N10T2

fabrikatzailea : IXYS

deskribapena : MOSFET N-CH 100V 320A TO-26

Series : GigaMOS™, HiPerFET™, TrenchT2™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 320A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3.5 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 430nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 26000pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1000W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : TO-268

Paketea / Kaxa : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IXFT , IXFT32

Dokumentuak IXFT320N10T2

Fitxak : IXFT320N10T2.pdf

produktu erlazionatutako IXFT320N10T2 IXYS

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