NP35N04YUG-E1-AY - MOSFET N-CH 40V 35A 8HSON

Fabrikatzailea Taldea zenbakia

NP35N04YUG-E1-AY

Barne Taldea zenbakia

ABC-NP35N04YUG-E1-AY

fabrikatzailea

Renesas Electronics America

Azalpen laburra

MOSFET N-CH 40V 35A 8HSON

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

51456 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute NP35N04YUG-E1-AY stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak NP35N04YUG-E1-AY

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : NP35N04YUG-E1-AY

fabrikatzailea : Renesas Electronics America

deskribapena : MOSFET N-CH 40V 35A 8HSON

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 40V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 35A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 10 mOhm @ 17.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 54nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2850pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1W (Ta), 77W (Tc)

Eragiketa tenperatura : 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-HSON

Paketea / Kaxa : 8-SMD, Flat Lead Exposed Pad

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : NP35N , NP35N04Y

Dokumentuak NP35N04YUG-E1-AY

Fitxak : NP35N04YUG-E1-AY.pdf

produktu erlazionatutako NP35N04YUG-E1-AY Renesas Electronics America

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