NTD60N02R-1G - MOSFET N-CH 25V 8.5A IPAK

Fabrikatzailea Taldea zenbakia

NTD60N02R-1G

Barne Taldea zenbakia

ABC-NTD60N02R-1G

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 25V 8.5A IPAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

59320 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute NTD60N02R-1G stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak NTD60N02R-1G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : NTD60N02R-1G

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 25V 8.5A IPAK

Series : -

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 25V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 8.5A (Ta), 32A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 10.5 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 14nC @ 4.5V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1330pF @ 20V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1.25W (Ta), 58W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : I-PAK

Paketea / Kaxa : TO-251-3 Short Leads, IPak, TO-251AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : NTD6 , NTD60N

Dokumentuak NTD60N02R-1G

Fitxak : NTD60N02R-1G.pdf

produktu erlazionatutako NTD60N02R-1G ON Semiconductor

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