RJK6015DPM-00#T1 - MOSFET N-CH 600V 21A TO3PFM

Fabrikatzailea Taldea zenbakia

RJK6015DPM-00#T1

Barne Taldea zenbakia

ABC-RJK6015DPM-00#T1

fabrikatzailea

Renesas Electronics America

Azalpen laburra

MOSFET N-CH 600V 21A TO3PFM

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

69792 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute RJK6015DPM-00#T1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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zehaztapenak RJK6015DPM-00#T1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : RJK6015DPM-00#T1

fabrikatzailea : Renesas Electronics America

deskribapena : MOSFET N-CH 600V 21A TO3PFM

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 21A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 360 mOhm @ 10.5A, 10V

Vgs (th) (Max) @ Id : -

Ateko karga (Qg) (Max) @ Vgs : 67nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2600pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 60W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-3PFM

Paketea / Kaxa : TO-3PFM, SC-93-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : RJK60 , RJK6015D

Dokumentuak RJK6015DPM-00#T1

Fitxak : RJK6015DPM-00#T1.pdf

produktu erlazionatutako RJK6015DPM-00#T1 Renesas Electronics America

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