DMN1017UCP3-7 - MOSFET N-CH 12V 7.5A X3-DSN1010

Fabrikatzailea Taldea zenbakia

DMN1017UCP3-7

Barne Taldea zenbakia

ABC-DMN1017UCP3-7

fabrikatzailea

Diodes Incorporated

Azalpen laburra

MOSFET N-CH 12V 7.5A X3-DSN1010

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

2749124 Pieces

Erreferentzia Prezioa

~~USD 0.119065~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DMN1017UCP3-7 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DMN1017UCP3-7

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DMN1017UCP3-7

fabrikatzailea : Diodes Incorporated

deskribapena : MOSFET N-CH 12V 7.5A X3-DSN1010

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 12V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 7.5A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 1.8V, 3.3V

Rds On (Max) @ Id, Vgs : 17 mOhm @ 5A, 3.3V

Vgs (th) (Max) @ Id : 1V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 16nC @ 3.3V

Vgs (Max) : ±8V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1503pF @ 6V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1.47W

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : X3-DSN1010-3

Paketea / Kaxa : 3-XDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DMN1 , DMN101

Dokumentuak DMN1017UCP3-7

Fitxak : DMN1017UCP3-7.pdf

produktu erlazionatutako DMN1017UCP3-7 Diodes Incorporated

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