2N7002ET1G - MOSFET N-CH 60V 260MA SOT-23

Fabrikatzailea Taldea zenbakia

2N7002ET1G

Barne Taldea zenbakia

ABC-2N7002ET1G

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 60V 260MA SOT-23

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

18049346 Pieces

Erreferentzia Prezioa

~~USD 0.018135~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute 2N7002ET1G stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak 2N7002ET1G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : 2N7002ET1G

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 60V 260MA SOT-23

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 260mA (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 2.5 Ohm @ 240mA, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 0.81nC @ 5V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 26.7pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 300mW (Tj)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : SOT-23-3 (TO-236)

Paketea / Kaxa : TO-236-3, SC-59, SOT-23-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : 2N7 , 2N700

Dokumentuak 2N7002ET1G

Fitxak : 2N7002ET1G.pdf

produktu erlazionatutako 2N7002ET1G ON Semiconductor

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