APTC60DAM35T1G - MOSFET N-CH 600V 72A SP1

Fabrikatzailea Taldea zenbakia

APTC60DAM35T1G

Barne Taldea zenbakia

ABC-APTC60DAM35T1G

fabrikatzailea

Microsemi Corporation

Azalpen laburra

MOSFET N-CH 600V 72A SP1

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

105552 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute APTC60DAM35T1G stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak APTC60DAM35T1G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : APTC60DAM35T1G

fabrikatzailea : Microsemi Corporation

deskribapena : MOSFET N-CH 600V 72A SP1

Series : -

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 600V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 72A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 35 mOhm @ 72A, 10V

Vgs (th) (Max) @ Id : 3.9V @ 5.4mA

Ateko karga (Qg) (Max) @ Vgs : 518nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 14000pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 416W (Tc)

Eragiketa tenperatura : -40°C ~ 150°C (TJ)

Muntatzeko mota : Chassis Mount

Hornitzaileentzako gailu paketea : SP1

Paketea / Kaxa : SP1

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : APTC , APTC60D

Dokumentuak APTC60DAM35T1G

Fitxak : APTC60DAM35T1G.pdf

produktu erlazionatutako APTC60DAM35T1G Microsemi Corporation

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