TK17E65W,S1X - MOSFET N-CH 650V 17.3A TO-220AB

Fabrikatzailea Taldea zenbakia

TK17E65W,S1X

Barne Taldea zenbakia

ABC-TK17E65W,S1X

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

MOSFET N-CH 650V 17.3A TO-220AB

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

87680 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TK17E65W,S1X stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TK17E65W,S1X

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TK17E65W,S1X

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : MOSFET N-CH 650V 17.3A TO-220AB

Series : DTMOSIV

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 650V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 17.3A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 200 mOhm @ 8.7A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 900µA

Ateko karga (Qg) (Max) @ Vgs : 45nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1800pF @ 300V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 165W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-220

Paketea / Kaxa : TO-220-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TK17 , TK17E6

Dokumentuak TK17E65W,S1X

Fitxak : TK17E65W,S1X.pdf

produktu erlazionatutako TK17E65W,S1X Toshiba Semiconductor and Storage

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