STB7NK80Z-1 - MOSFET N-CH 800V 5.2A I2PAK

Fabrikatzailea Taldea zenbakia

STB7NK80Z-1

Barne Taldea zenbakia

ABC-STB7NK80Z-1

fabrikatzailea

STMicroelectronics

Azalpen laburra

MOSFET N-CH 800V 5.2A I2PAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

411257 Pieces

Erreferentzia Prezioa

~~USD 0.795905~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute STB7NK80Z-1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak STB7NK80Z-1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : STB7NK80Z-1

fabrikatzailea : STMicroelectronics

deskribapena : MOSFET N-CH 800V 5.2A I2PAK

Series : SuperMESH™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 800V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 5.2A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 1.8 Ohm @ 2.6A, 10V

Vgs (th) (Max) @ Id : 4.5V @ 100µA

Ateko karga (Qg) (Max) @ Vgs : 56nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 1138pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 125W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : I2PAK

Paketea / Kaxa : TO-262-3 Long Leads, I²Pak, TO-262AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : STB , STB7N

Dokumentuak STB7NK80Z-1

Fitxak : STB7NK80Z-1.pdf

produktu erlazionatutako STB7NK80Z-1 STMicroelectronics

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