SPU02N60C3BKMA1 - MOSFET N-CH 650V 1.8A IPAK

Fabrikatzailea Taldea zenbakia

SPU02N60C3BKMA1

Barne Taldea zenbakia

ABC-SPU02N60C3BKMA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 650V 1.8A IPAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

511441 Pieces

Erreferentzia Prezioa

~~USD 0.64~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SPU02N60C3BKMA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SPU02N60C3BKMA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SPU02N60C3BKMA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 650V 1.8A IPAK

Series : CoolMOS™

Taldearen egoera : Not For New Designs

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 650V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 1.8A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3 Ohm @ 1.1A, 10V

Vgs (th) (Max) @ Id : 3.9V @ 80µA

Ateko karga (Qg) (Max) @ Vgs : 12.5nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 200pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 25W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : PG-TO251-3

Paketea / Kaxa : TO-251-3 Short Leads, IPak, TO-251AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SPU02 , SPU02N6

Dokumentuak SPU02N60C3BKMA1

Fitxak : SPU02N60C3BKMA1.pdf

produktu erlazionatutako SPU02N60C3BKMA1 Infineon Technologies

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