FDP8D5N10C - FET ENGR DEV-NOT REL

Fabrikatzailea Taldea zenbakia

FDP8D5N10C

Barne Taldea zenbakia

ABC-FDP8D5N10C

fabrikatzailea

ON Semiconductor

Azalpen laburra

FET ENGR DEV-NOT REL

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

279020 Pieces

Erreferentzia Prezioa

~~USD 1.17307~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FDP8D5N10C stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FDP8D5N10C

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FDP8D5N10C

fabrikatzailea : ON Semiconductor

deskribapena : FET ENGR DEV-NOT REL

Series : PowerTrench®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 76A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 8.5 mOhm @ 76A, 10V

Vgs (th) (Max) @ Id : 4V @ 130µA

Ateko karga (Qg) (Max) @ Vgs : 34nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2475pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.4W (Ta), 107W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-220-3

Paketea / Kaxa : TO-220-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FDP , FDP8D

Dokumentuak FDP8D5N10C

Fitxak : FDP8D5N10C.pdf

produktu erlazionatutako FDP8D5N10C ON Semiconductor

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