FQU10N20TU_AM002 - MOSFET N-CH 200V 7.6A IPAK

Fabrikatzailea Taldea zenbakia

FQU10N20TU_AM002

Barne Taldea zenbakia

ABC-FQU10N20TU_AM002

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 200V 7.6A IPAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

47124 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FQU10N20TU_AM002 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FQU10N20TU_AM002

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FQU10N20TU_AM002

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 200V 7.6A IPAK

Series : QFET®

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 7.6A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 360 mOhm @ 3.8A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 18nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 670pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 2.5W (Ta), 51W (Tc)

Eragiketa tenperatura : -

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : I-PAK

Paketea / Kaxa : TO-251-3 Short Leads, IPak, TO-251AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FQU10 , FQU10N20

Dokumentuak FQU10N20TU_AM002

Fitxak : FQU10N20TU_AM002.pdf

produktu erlazionatutako FQU10N20TU_AM002 ON Semiconductor

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