NVMFSW6D1N08HT1G - T8 80V 1 PART PROLIFERATI

Fabrikatzailea Taldea zenbakia

NVMFSW6D1N08HT1G

Barne Taldea zenbakia

ABC-NVMFSW6D1N08HT1G

fabrikatzailea

ON Semiconductor

Azalpen laburra

T8 80V 1 PART PROLIFERATI

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

880117 Pieces

Erreferentzia Prezioa

~~USD 0.37191~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute NVMFSW6D1N08HT1G stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak NVMFSW6D1N08HT1G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : NVMFSW6D1N08HT1G

fabrikatzailea : ON Semiconductor

deskribapena : T8 80V 1 PART PROLIFERATI

Series : Automotive, AEC-Q101

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 80V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 17A (Ta), 89A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 4V @ 120µA

Ateko karga (Qg) (Max) @ Vgs : 32nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2085pF @ 40V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 3.8W (Ta), 104W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 5-DFN (5x6) (8-SOFL)

Paketea / Kaxa : 8-PowerTDFN, 5 Leads

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : NVMFS , NVMFSW6D

Dokumentuak NVMFSW6D1N08HT1G

Fitxak : NVMFSW6D1N08HT1G.pdf

produktu erlazionatutako NVMFSW6D1N08HT1G ON Semiconductor

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