DGD2012S8-13 - IC GATE DRVR HALF-BRIDG 8SO 2.5K

Fabrikatzailea Taldea zenbakia

DGD2012S8-13

Barne Taldea zenbakia

ABC-DGD2012S8-13

fabrikatzailea

Diodes Incorporated

Azalpen laburra

IC GATE DRVR HALF-BRIDG 8SO 2.5K

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1137304 Pieces

Erreferentzia Prezioa

~~USD 0.32~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute DGD2012S8-13 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak DGD2012S8-13

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : DGD2012S8-13

fabrikatzailea : Diodes Incorporated

deskribapena : IC GATE DRVR HALF-BRIDG 8SO 2.5K

Series : -

Taldearen egoera : Active

Gidatutako Konfigurazioa : Half-Bridge

Kanal mota : Independent

Gidari kopurua : 2

Ate mota : N-Channel MOSFET

Tentsioa - Hornidura : 10V ~ 20V

Logikako tentsioa - VIL, VIH : 0.8V, 2.5V

Uneko irteera maximoa (iturria, konketa) : 1.9A, 2.3A

Sarrera mota : Non-Inverting

Alboko tentsio altua - Max (Bootstrap) : 200V

Igoera / Eroriko Denbora (Normala) : 40ns, 20ns

Eragiketa tenperatura : -40°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : 8-SOIC (0.154", 3.90mm Width)

Hornitzaileentzako gailu paketea : 8-SO

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : DGD2 , DGD201

Dokumentuak DGD2012S8-13

Fitxak : DGD2012S8-13.pdf

produktu erlazionatutako DGD2012S8-13 Diodes Incorporated

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