IRF200P223 - MOSFET N-CH 200V 100A TO247AC

Fabrikatzailea Taldea zenbakia

IRF200P223

Barne Taldea zenbakia

ABC-IRF200P223

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 200V 100A TO247AC

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

78066 Pieces

Erreferentzia Prezioa

~~USD 5.39~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IRF200P223 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IRF200P223

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IRF200P223

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 200V 100A TO247AC

Series : StrongIRFET™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 200V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 100A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 11.5 mOhm @ 60A, 10V

Vgs (th) (Max) @ Id : 4V @ 270µA

Ateko karga (Qg) (Max) @ Vgs : 102nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 5094pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 313W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-247AC

Paketea / Kaxa : TO-247-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IRF , IRF20

Dokumentuak IRF200P223

Fitxak : IRF200P223.pdf

produktu erlazionatutako IRF200P223 Infineon Technologies

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