RJK03M4DPA-00#J5A - MOSFET N-CH 30V 35A WPAK

Fabrikatzailea Taldea zenbakia

RJK03M4DPA-00#J5A

Barne Taldea zenbakia

ABC-RJK03M4DPA-00#J5A

fabrikatzailea

Renesas Electronics America

Azalpen laburra

MOSFET N-CH 30V 35A WPAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1046556 Pieces

Erreferentzia Prezioa

~~USD 0.31276~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute RJK03M4DPA-00#J5A stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak RJK03M4DPA-00#J5A

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : RJK03M4DPA-00#J5A

fabrikatzailea : Renesas Electronics America

deskribapena : MOSFET N-CH 30V 35A WPAK

Series : -

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 35A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 4.6 mOhm @ 17.5A, 10V

Vgs (th) (Max) @ Id : -

Ateko karga (Qg) (Max) @ Vgs : 12nC @ 4.5V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2170pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 30W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-WPAK

Paketea / Kaxa : 8-WFDFN Exposed Pad

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : RJK03 , RJK03M4D

Dokumentuak RJK03M4DPA-00#J5A

Fitxak : RJK03M4DPA-00#J5A.pdf

produktu erlazionatutako RJK03M4DPA-00#J5A Renesas Electronics America

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