FDV302P - MOSFET P-CH 25V 120MA SOT-23

Fabrikatzailea Taldea zenbakia

FDV302P

Barne Taldea zenbakia

ABC-FDV302P

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET P-CH 25V 120MA SOT-23

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

9122757 Pieces

Erreferentzia Prezioa

~~USD 0.03588~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FDV302P stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FDV302P

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FDV302P

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET P-CH 25V 120MA SOT-23

Series : -

Taldearen egoera : Active

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 25V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 120mA (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 2.7V, 4.5V

Rds On (Max) @ Id, Vgs : 10 Ohm @ 200mA, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 0.31nC @ 4.5V

Vgs (Max) : ±8V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 11pF @ 10V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 350mW (Ta)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : SOT-23

Paketea / Kaxa : TO-236-3, SC-59, SOT-23-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FD , FDV

Dokumentuak FDV302P

Fitxak : FDV302P.pdf

produktu erlazionatutako FDV302P ON Semiconductor

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