STI200N6F3 - MOSFET N-CH 60V 120A I2PAK

Fabrikatzailea Taldea zenbakia

STI200N6F3

Barne Taldea zenbakia

ABC-STI200N6F3

fabrikatzailea

STMicroelectronics

Azalpen laburra

MOSFET N-CH 60V 120A I2PAK

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

99216 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute STI200N6F3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak STI200N6F3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : STI200N6F3

fabrikatzailea : STMicroelectronics

deskribapena : MOSFET N-CH 60V 120A I2PAK

Series : STripFET™

Taldearen egoera : Obsolete

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 120A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 60A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 101nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 6265pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 330W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : I2PAK (TO-262)

Paketea / Kaxa : TO-262-3 Long Leads, I²Pak, TO-262AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : STI , STI20

Dokumentuak STI200N6F3

Fitxak : STI200N6F3.pdf

produktu erlazionatutako STI200N6F3 STMicroelectronics

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