SBAS16LT1G - DIODE GEN PURP 75V 200MA SOT23-3

Fabrikatzailea Taldea zenbakia

SBAS16LT1G

Barne Taldea zenbakia

ABC-SBAS16LT1G

fabrikatzailea

ON Semiconductor

Azalpen laburra

DIODE GEN PURP 75V 200MA SOT23-3

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

9460255 Pieces

Erreferentzia Prezioa

~~USD 0.0346~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SBAS16LT1G stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SBAS16LT1G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SBAS16LT1G

fabrikatzailea : ON Semiconductor

deskribapena : DIODE GEN PURP 75V 200MA SOT23-3

Series : Automotive, AEC-Q101

Taldearen egoera : Active

Diodo mota : Standard

Tentsioa - DC alderantzikatua (Vr) (Max) : 100V

Oraingoa - Batez besteko laukizatua (Io) : 200mA (DC)

Tentsioa - Aurrera (Vf) (Max) @ If : 1.25V @ 150mA

Abiadura : Small Signal =< 200mA (Io), Any Speed

Alderantzizko berreskurapen denbora (trr) : 6ns

Oraingoa - alderantzizko ihesa @ Vr : 1µA @ 100V

Edukiera @ Vr, F : 2pF @ 0V, 1MHz

Muntatzeko mota : Surface Mount

Paketea / Kaxa : TO-236-3, SC-59, SOT-23-3

Hornitzaileentzako gailu paketea : SOT-23-3 (TO-236)

Eragiketa tenperatura - Junction : -55°C ~ 150°C

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SBA , SBAS1

Dokumentuak SBAS16LT1G

Fitxak : SBAS16LT1G.pdf

produktu erlazionatutako SBAS16LT1G ON Semiconductor

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