FQA13N80-F109 - MOSFET N-CH 800V 12.6A TO-3P

Fabrikatzailea Taldea zenbakia

FQA13N80-F109

Barne Taldea zenbakia

ABC-FQA13N80-F109

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 800V 12.6A TO-3P

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

121448 Pieces

Erreferentzia Prezioa

~~USD 3.08~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FQA13N80-F109 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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zehaztapenak FQA13N80-F109

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FQA13N80-F109

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 800V 12.6A TO-3P

Series : QFET®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 800V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 12.6A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 750 mOhm @ 6.3A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 88nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 3500pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 300W (Tc)

Eragiketa tenperatura : -55°C ~ 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-3PN

Paketea / Kaxa : TO-3P-3, SC-65-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FQA1 , FQA13N

Dokumentuak FQA13N80-F109

Fitxak : FQA13N80-F109.pdf

produktu erlazionatutako FQA13N80-F109 ON Semiconductor

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