RS1E300GNTB - MOSFET N-CH 30V 30A 8-HSOP

Fabrikatzailea Taldea zenbakia

RS1E300GNTB

Barne Taldea zenbakia

ABC-RS1E300GNTB

fabrikatzailea

Rohm Semiconductor

Azalpen laburra

MOSFET N-CH 30V 30A 8-HSOP

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1646498 Pieces

Erreferentzia Prezioa

~~USD 0.1988~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute RS1E300GNTB stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak RS1E300GNTB

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : RS1E300GNTB

fabrikatzailea : Rohm Semiconductor

deskribapena : MOSFET N-CH 30V 30A 8-HSOP

Series : -

Taldearen egoera : Not For New Designs

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 30A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 2.2 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 39.8nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 2500pF @ 15V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 3W (Ta), 33W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : 8-HSOP

Paketea / Kaxa : 8-PowerTDFN

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : RS1 , RS1E3

Dokumentuak RS1E300GNTB

Fitxak : RS1E300GNTB.pdf

produktu erlazionatutako RS1E300GNTB Rohm Semiconductor

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