TK3A65D(STA4,Q,M) - MOSFET N-CH 650V 3A TO-220SIS

Fabrikatzailea Taldea zenbakia

TK3A65D(STA4,Q,M)

Barne Taldea zenbakia

ABC-TK3A65D(STA4,Q,M)

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

MOSFET N-CH 650V 3A TO-220SIS

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

502789 Pieces

Erreferentzia Prezioa

~~USD 0.651~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TK3A65D(STA4,Q,M) stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TK3A65D(STA4,Q,M)

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TK3A65D(STA4,Q,M)

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : MOSFET N-CH 650V 3A TO-220SIS

Series : π-MOSVII

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 650V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 3A (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 2.25 Ohm @ 1.5A, 10V

Vgs (th) (Max) @ Id : 4.4V @ 1mA

Ateko karga (Qg) (Max) @ Vgs : 11nC @ 10V

Vgs (Max) : ±30V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 540pF @ 25V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 35W (Tc)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-220SIS

Paketea / Kaxa : TO-220-3 Full Pack

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TK3A6 , TK3A65D(

Dokumentuak TK3A65D(STA4,Q,M)

Fitxak : TK3A65D(STA4,Q,M).pdf

produktu erlazionatutako TK3A65D(STA4,Q,M) Toshiba Semiconductor and Storage

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