TK4R3E06PL,S1X - X35 PB-F POWER MOSFET TRANSISTOR

Fabrikatzailea Taldea zenbakia

TK4R3E06PL,S1X

Barne Taldea zenbakia

ABC-TK4R3E06PL,S1X

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

X35 PB-F POWER MOSFET TRANSISTOR

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

330624 Pieces

Erreferentzia Prezioa

~~USD 0.99~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute TK4R3E06PL,S1X stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak TK4R3E06PL,S1X

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : TK4R3E06PL,S1X

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : X35 PB-F POWER MOSFET TRANSISTOR

Series : U-MOSIX-H

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 80A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 7.2 mOhm @ 15A, 4.5V

Vgs (th) (Max) @ Id : 2.5V @ 500µA

Ateko karga (Qg) (Max) @ Vgs : 48.2nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 3280pF @ 30V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 87W (Tc)

Eragiketa tenperatura : 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : TO-220

Paketea / Kaxa : TO-220-3

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : TK4R , TK4R3E0

Dokumentuak TK4R3E06PL,S1X

Fitxak : TK4R3E06PL,S1X.pdf

produktu erlazionatutako TK4R3E06PL,S1X Toshiba Semiconductor and Storage

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