ES3JBHM4G - DIODE GEN PURP 600V 3A DO214AA

Fabrikatzailea Taldea zenbakia

ES3JBHM4G

Barne Taldea zenbakia

ABC-ES3JBHM4G

fabrikatzailea

Taiwan Semiconductor Corporation

Azalpen laburra

DIODE GEN PURP 600V 3A DO214AA

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

3481800 Pieces

Erreferentzia Prezioa

~~USD 0.09401~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute ES3JBHM4G stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak ES3JBHM4G

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : ES3JBHM4G

fabrikatzailea : Taiwan Semiconductor Corporation

deskribapena : DIODE GEN PURP 600V 3A DO214AA

Series : Automotive, AEC-Q101

Taldearen egoera : Active

Diodo mota : Standard

Tentsioa - DC alderantzikatua (Vr) (Max) : 600V

Oraingoa - Batez besteko laukizatua (Io) : 3A

Tentsioa - Aurrera (Vf) (Max) @ If : 1.45V @ 3A

Abiadura : Fast Recovery =< 500ns, > 200mA (Io)

Alderantzizko berreskurapen denbora (trr) : 35ns

Oraingoa - alderantzizko ihesa @ Vr : 10µA @ 600V

Edukiera @ Vr, F : 34pF @ 4V, 1MHz

Muntatzeko mota : Surface Mount

Paketea / Kaxa : DO-214AA, SMB

Hornitzaileentzako gailu paketea : DO-214AA (SMB)

Eragiketa tenperatura - Junction : -55°C ~ 150°C

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : ES3 , ES3J

Dokumentuak ES3JBHM4G

Fitxak : ES3JBHM4G.pdf

produktu erlazionatutako ES3JBHM4G Taiwan Semiconductor Corporation

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