CTLDM8120-M621H TR - MOSFET P-CH 20V DFN6

Fabrikatzailea Taldea zenbakia

CTLDM8120-M621H TR

Barne Taldea zenbakia

ABC-CTLDM8120-M621H TR

fabrikatzailea

Central Semiconductor Corp

Azalpen laburra

MOSFET P-CH 20V DFN6

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

44148 Pieces

Erreferentzia Prezioa

~~USD 0~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute CTLDM8120-M621H TR stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak CTLDM8120-M621H TR

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : CTLDM8120-M621H TR

fabrikatzailea : Central Semiconductor Corp

deskribapena : MOSFET P-CH 20V DFN6

Series : -

Taldearen egoera : Obsolete

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 20V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 950mA (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 150 mOhm @ 950mA, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 3.56nC @ 4.5V

Vgs (Max) : 8V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 200pF @ 16V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 1.6W (Ta)

Eragiketa tenperatura : -65°C ~ 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : TLM621H

Paketea / Kaxa : 6-XFDFN Exposed Pad

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : CTLDM8 , CTLDM8120

Dokumentuak CTLDM8120-M621H TR

Fitxak : CTLDM8120-M621H TR.pdf

produktu erlazionatutako CTLDM8120-M621H TR Central Semiconductor Corp

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