IPC042N03L3X1SA1 - MOSFET N-CH 30V 1A SAWN ON FOIL

Fabrikatzailea Taldea zenbakia

IPC042N03L3X1SA1

Barne Taldea zenbakia

ABC-IPC042N03L3X1SA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 30V 1A SAWN ON FOIL

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1735727 Pieces

Erreferentzia Prezioa

~~USD 0.18858~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IPC042N03L3X1SA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IPC042N03L3X1SA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IPC042N03L3X1SA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 30V 1A SAWN ON FOIL

Series : OptiMOS™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 30V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 1A (Tj)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, Vgs : 50 mOhm @ 2A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Sarrerako ahalmena (Ciss) (Max) @ Vds : -

FET Ezaugarria : -

Potentzia xahutzea (Max) : -

Eragiketa tenperatura : -

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : Sawn on foil

Paketea / Kaxa : Die

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IPC04 , IPC042N0

Dokumentuak IPC042N03L3X1SA1

Fitxak : IPC042N03L3X1SA1.pdf

produktu erlazionatutako IPC042N03L3X1SA1 Infineon Technologies

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