IPI037N08N3GXKSA1 - MOSFET N-CH 80V 100A

Fabrikatzailea Taldea zenbakia

IPI037N08N3GXKSA1

Barne Taldea zenbakia

ABC-IPI037N08N3GXKSA1

fabrikatzailea

Infineon Technologies

Azalpen laburra

MOSFET N-CH 80V 100A

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

305396 Pieces

Erreferentzia Prezioa

~~USD 1.07177~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute IPI037N08N3GXKSA1 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak IPI037N08N3GXKSA1

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : IPI037N08N3GXKSA1

fabrikatzailea : Infineon Technologies

deskribapena : MOSFET N-CH 80V 100A

Series : OptiMOS™

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 80V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 100A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 6V, 10V

Rds On (Max) @ Id, Vgs : 3.75 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 3.5V @ 155µA

Ateko karga (Qg) (Max) @ Vgs : 117nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 8110pF @ 40V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 214W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : PG-TO262-3

Paketea / Kaxa : TO-262-3 Long Leads, I²Pak, TO-262AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : IPI03 , IPI037N0

Dokumentuak IPI037N08N3GXKSA1

Fitxak : IPI037N08N3GXKSA1.pdf

produktu erlazionatutako IPI037N08N3GXKSA1 Infineon Technologies

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