SQS966ENW-T1_GE3 - MOSFET N-CHAN 60V

Fabrikatzailea Taldea zenbakia

SQS966ENW-T1_GE3

Barne Taldea zenbakia

ABC-SQS966ENW-T1_GE3

fabrikatzailea

Vishay Siliconix

Azalpen laburra

MOSFET N-CHAN 60V

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

1529402 Pieces

Erreferentzia Prezioa

~~USD 0.21402~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SQS966ENW-T1_GE3 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SQS966ENW-T1_GE3

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SQS966ENW-T1_GE3

fabrikatzailea : Vishay Siliconix

deskribapena : MOSFET N-CHAN 60V

Series : Automotive, AEC-Q101, TrenchFET®

Taldearen egoera : Active

FET Mota : 2 N-Channel (Dual)

FET Ezaugarria : Standard

Xukatu iturburuko tentsioa (Vdss) : 60V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 6A (Tc)

Rds On (Max) @ Id, Vgs : 36 mOhm @ 1.25A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 8.8nC @ 10V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 572pF @ 25V

Potentzia - Max : 27.8W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Surface Mount

Paketea / Kaxa : PowerPAK® 1212-8W

Hornitzaileentzako gailu paketea : PowerPAK® 1212-8W

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SQS96 , SQS966EN

Dokumentuak SQS966ENW-T1_GE3

Fitxak : SQS966ENW-T1_GE3.pdf

produktu erlazionatutako SQS966ENW-T1_GE3 Vishay Siliconix

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