SSM3J35MFV,L3F - MOSFET P-CH 20V 0.1A VESM

Fabrikatzailea Taldea zenbakia

SSM3J35MFV,L3F

Barne Taldea zenbakia

ABC-SSM3J35MFV,L3F

fabrikatzailea

Toshiba Semiconductor and Storage

Azalpen laburra

MOSFET P-CH 20V 0.1A VESM

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

19254403 Pieces

Erreferentzia Prezioa

~~USD 0.017~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute SSM3J35MFV,L3F stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak SSM3J35MFV,L3F

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : SSM3J35MFV,L3F

fabrikatzailea : Toshiba Semiconductor and Storage

deskribapena : MOSFET P-CH 20V 0.1A VESM

Series : -

Taldearen egoera : Active

FET Mota : P-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 20V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 100mA (Ta)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : -

Rds On (Max) @ Id, Vgs : 8 Ohm @ 50mA, 4V

Vgs (th) (Max) @ Id : -

Ateko karga (Qg) (Max) @ Vgs : -

Vgs (Max) : -

Sarrerako ahalmena (Ciss) (Max) @ Vds : 12.2pF @ 3V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 150mW (Ta)

Eragiketa tenperatura : 150°C (TJ)

Muntatzeko mota : Surface Mount

Hornitzaileentzako gailu paketea : VESM

Paketea / Kaxa : SOT-723

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : SSM3 , SSM3J35

Dokumentuak SSM3J35MFV,L3F

Fitxak : SSM3J35MFV,L3F.pdf

produktu erlazionatutako SSM3J35MFV,L3F Toshiba Semiconductor and Storage

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