FDI045N10A-F102 - MOSFET N-CH 100V 120A I2PAK-3

Fabrikatzailea Taldea zenbakia

FDI045N10A-F102

Barne Taldea zenbakia

ABC-FDI045N10A-F102

fabrikatzailea

ON Semiconductor

Azalpen laburra

MOSFET N-CH 100V 120A I2PAK-3

RoHS Status

Doinua libre / RoHS betetzen

Delivery Time

1-2 egun

Kopurua eskura

161936 Pieces

Erreferentzia Prezioa

~~USD 2.31~~

Gure prezioa

- (Mesedez jarri gurekin hobeto prezio bat: [email protected])

ABC Semiconductor dute FDI045N10A-F102 stock saltzen da.

Aukera Ontziak eta denbora bidalketa:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Ordainketa Aukerak:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

zehaztapenak FDI045N10A-F102

Kalitatea Bermatzeko : 365 egun bermerik

stock Baliabideen : Frankizia banatzailea / Fabrikatzailea Zuzeneko

Jatorrizko herrialdea : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Taldea zenbakia : FDI045N10A-F102

fabrikatzailea : ON Semiconductor

deskribapena : MOSFET N-CH 100V 120A I2PAK-3

Series : PowerTrench®

Taldearen egoera : Active

FET Mota : N-Channel

Teknologia : MOSFET (Metal Oxide)

Xukatu iturburuko tentsioa (Vdss) : 100V

Korrontea - Etengabeko hustubidea (Id) @ 25 ° C : 120A (Tc)

Unitatearen Tentsioa (Max Rds On, Min Rds On) : 10V

Rds On (Max) @ Id, Vgs : 4.5 mOhm @ 100A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Ateko karga (Qg) (Max) @ Vgs : 74nC @ 10V

Vgs (Max) : ±20V

Sarrerako ahalmena (Ciss) (Max) @ Vds : 5270pF @ 50V

FET Ezaugarria : -

Potentzia xahutzea (Max) : 263W (Tc)

Eragiketa tenperatura : -55°C ~ 175°C (TJ)

Muntatzeko mota : Through Hole

Hornitzaileentzako gailu paketea : I2PAK (TO-262)

Paketea / Kaxa : TO-262-3 Long Leads, I²Pak, TO-262AA

pisu : -

baldintza : Berria eta original

Erlazionatutako estekak : FDI04 , FDI045N

Dokumentuak FDI045N10A-F102

Fitxak : FDI045N10A-F102.pdf

produktu erlazionatutako FDI045N10A-F102 ON Semiconductor

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